Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy.
نویسندگان
چکیده
We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of ∼700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Landég-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of ∼300 μeV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices.
منابع مشابه
Characterization of InSb quantum dots in InAs matrix grown by molecular beam epitaxy for infrared photodetectors
متن کامل
Self-assembled InSb and GaSb quantum dots on GaAs(001)
Quantum dots of InSb and GaSb were grown on GaAs~001! by molecular-beam epitaxy. In situ scanning tunneling microscopy measurements taken after 1–2 monolayers of InSb or GaSb growth reveal the surface is a network of anisotropic ribbon-like platelets. These platelets are a precursor to quantum dot growth. Transmission electron microscopy measurements indicate that the quantum dots are coherentl...
متن کاملCoherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions.
Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid devices is a necessary step towards engineering topological superconducting electronics. Here, we report on a low-temperature transport study of Josephson jun...
متن کاملSelfassembled quantum dots of InSb grown on InP by atomic layer molecular beam epitaxy: Morphology and strain relaxation
Related Articles Nano-lithography free formation of high density Ge-on-insulator network for epitaxial template Appl. Phys. Lett. 100, 092111 (2012) Thermal properties of the hybrid graphene-metal nano-micro-composites: Applications in thermal interface materials Appl. Phys. Lett. 100, 073113 (2012) Efficiently recyclable magnetic core-shell photocatalyst for photocatalytic oxidation of chlorop...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Nanoscale
دوره 7 36 شماره
صفحات -
تاریخ انتشار 2015